Communications on Applied Electronics
Foundation of Computer Science (FCS), NY, USA
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Volume 3 - Issue 3 |
Published: October 2015 |
Authors: Kunal S. Khandelwal, Abdul K. Kureshi |
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Kunal S. Khandelwal, Abdul K. Kureshi . A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application. Communications on Applied Electronics. 3, 3 (October 2015), 1-5. DOI=10.5120/cae2015651888
@article{ 10.5120/cae2015651888, author = { Kunal S. Khandelwal,Abdul K. Kureshi }, title = { A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application }, journal = { Communications on Applied Electronics }, year = { 2015 }, volume = { 3 }, number = { 3 }, pages = { 1-5 }, doi = { 10.5120/cae2015651888 }, publisher = { Foundation of Computer Science (FCS), NY, USA } }
%0 Journal Article %D 2015 %A Kunal S. Khandelwal %A Abdul K. Kureshi %T A 2~8 GHz UWB Low Noise Amplifier using 0.15 µm GaAs pHEMT Technology for Multiband Wireless Application%T %J Communications on Applied Electronics %V 3 %N 3 %P 1-5 %R 10.5120/cae2015651888 %I Foundation of Computer Science (FCS), NY, USA
This paper proposes 2GHz ~ 8GHz UWB LNA with totem pole technique for low noise figure. The LNA was designed using 0.15 µm GaAs pHMET process. The designed LNA was simulated in ADS tool. The LNA exhibits a S(2,1) of 33.4~29.7 dB, minimum noise figure is 1.383~1.391 dB, reverse isolation was better than 40 dB in entire band. The LNA draws 32 mA. Resistive feedback technique was used for wideband matching and low noise figure.